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M2TP80M12W2-2LA Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte M2TP80M12W2-2LA
Spiegazioni elettronici  Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
PDF  14 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M2TP80M12W2-2LA Scheda tecnica(HTML) 2 Page - STMicroelectronics

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1
SiC Power MOSFET (Q1, Q2, Q3, Q4, Q5, Q6)
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-source breakdown voltage
1200
V
VGS
Gate-source voltage
-10 to 22
V
Gate-source voltage (recommended operating values)
-5 to 18
ID
Drain current (continuous) at TC = 50 °C
30
A
IDM(1)
Drain current (pulsed, tp = 1 ms)
58
A
TJ
Operating junction temperature range
-40 to 175
°C
1. Pulse width is limited by safe operating area.
Table 2. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
RDS(on)
Static drain-source on resistance
VGS = 18 V, ID = 20 A
84
114
mΩ
VGS = 18 V, ID = 20 A TJ = 175 °C
178
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
1.9
3.2
5
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 1200 V
10
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = -10 to 22 V
±100
nA
Ciss
Input capacitance
VDS = 800 V, f = 1 MHz, VGS = 0 V
1230
pF
Coss
Output capacitance
56
pF
Crss
Reverse transfer capacitance
15
pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
1
Ω
Qg
Total gate charge
VDD = 800 V, ID = 20 A,
VGS = -5 to 18 V
63
nC
Qgs
Gate-source charge
15
nC
Qgd
Gate-drain charge
20
nC
Eon
Turn-on switching energy
VDS = 800 V, ID = 20 A,
RG(on) = 12 Ω, RG(off) = 5.6 Ω,
VGS = -5 to 18 V
374
µJ
Eoff
Turn-off switching energy
64
µJ
RthJC
Thermal resistance, junction-to-case
0.54
°C/W
Table 3. Reverse intrinsic SiC diode characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD
Forward on voltage drop
VGS = 0 V, ISD = 20 A
-
3.4
-
V
trr
Reverse recovery time
ISD = 20 A, VDD = 800 V,
RG(on) = 12 Ω, RG(off) = 5.6 Ω
-
14.1
-
ns
Qrr
Reverse recovery charge
-
163
-
nC
IIRRM
Reverse recovery current
-
19
-
A
M2TP80M12W2-2LA
SiC Power MOSFET (Q1, Q2, Q3, Q4, Q5, Q6)
DS14474 - Rev 3
page 2/14



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