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IRFBC30 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte IRFBC30
Spiegazioni elettronici  N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET
PDF  8 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRFBC30 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 250 V
ID =2.5 A
RG =4.7
Ω
VGS =10 V
(see test circuit, figure 3)
14
14
ns
ns
Qg
Q gs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 480 V
ID =3.6 A VGS =10 V
16.5
2.5
9
23. 1
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise Time
Fall Time
Cross-over Time
VDD = 480 V
ID =3.6 A
RG =4.7
Ω VGS =10 V
(see test circuit, figure 5)
15
19
24
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
3. 6
14
A
A
VSD (
∗)
Forward On Volt age
ISD =3.6A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 5 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
(see test circuit, figure 5)
600
2.8
9
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
IRFBC30
3/8



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