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IRFP250 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte IRFP250
Spiegazioni elettronici  N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET
PDF  8 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRFP250 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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IRFP250
Safe Operating Area
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 100V, ID =16 A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
25
ns
tr
Rise Time
50
ns
Qg
Total Gate Charge
VDD = 160V, ID = 33 A,
VGS = 10V, RG =4.7Ω
117
158
nC
Qgs
Gate-Source Charge
15
nC
Qgd
Gate-Drain Charge
50
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 160V, ID = 16 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
60
ns
tf
Fall Time
40
ns
tc
Cross-over Time
100
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
33
A
ISDM (2)
Source-drain Current (pulsed)
132
A
VSD (1)
Forward On Voltage
ISD = 33 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 33 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
370
ns
Qrr
Reverse Recovery Charge
5.4
µC
IRRM
Reverse Recovery Current
29
A



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