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HWF1686RA Scheda tecnica(PDF) 2 Page - Hexawave, Inc |
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HWF1686RA Scheda tecnica(HTML) 2 Page - Hexawave, Inc |
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2 / 3 page ![]() HWF1686RA L-Band GaAs Power FET June 2005 V3 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. . Typical Performance at 25°°°°C Output Power, Efficiency & Gain vs. Input Power VDS=10V, IDS=0.5IDSS f=2.4GHz 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 Gain Pout Pin (dBm) η add Power Derating Curve (175,0) (25,3.5) 0 2 4 6 0 50 100 150 200 Case Temperature,TC (℃) |
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