HWL26NPB

L-Band GaAs Power FET

Autumn 2002 V1

Hexawave Inc.

2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C..

TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw

Typical Performance at 25°°°°C

Output Power & Efficiency vs Vds

@ f=0.9GHz,Ids=110mA

0

5

10

15

20

25

30

1

2

3

4

5

6

Vds (V)

Po (dBm)

0

10

20

30

40

50

60

PAE (%)

Po

PAE

Output Power & Efficiency vs Vds

@ f=1.9GHz,Ids=110mA

0

5

10

15

20

25

30

1

2

3

4

5

6

Vds (V)

Po (dBm)

0

10

20

30

40

50

60

PAE (%)

Po

PAE