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HWL27NPB Scheda tecnica(PDF) 2 Page - Hexawave, Inc |
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HWL27NPB Scheda tecnica(HTML) 2 Page - Hexawave, Inc |
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2 / 4 page ![]() HWL27NPB L-Band GaAs Power FET Autumn 2002 V1 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. Typical Performance at 25°°°°C Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V 0 5 10 15 20 25 -8 -4 0 4 8 12 Pin (dBm) Po (dBm) 0 10 20 30 40 50 60 Gain PAE (%) Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V 0 5 10 15 20 25 30 0 5 10 15 20 Pin (dBm) Po (dBm) 0 10 20 30 40 50 60 Gain PAE (%) Po Gain Eff |
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