HWL34YRA

L-Band GaAs Power FET

Autumn 2002 V1

Hexawave Inc.

2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C..

TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw

Features

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Low Cost GaAs Power FET

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Class A or Class AB Operation

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14.5 dB Typical Gain at 2.4GHz

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5V to 10V Operation

Description

The HWL34YRA is a Power GaAs FET designed for

various L-band & S-band applications.

It is presently

offered in low cost ceramic package.

Absolute Maximum Ratings

Drain to Source Voltage

+15V

Gate to Source Voltage

-5V

Drain Current

Gate Current

6mA

Channel Temperature

175°C

Storage Temperature

-65 to +175°C

*

Power Dissipation

12W

*

mounted on an infinite heat sink.

Outline Dimensions

Symbol

Parameters & Conditions

Units

Min.

Typ.

Max.

mA

900

1200

1600

V

-3.5

-2.0

-1.5

mS

-

700

-

Thermal Resistance

°

C/W

-

9

12

Power Output at Test Points

dBm

33

34

-

Gain at 1dB Compression Point

dB

13.5

14.5

-

PAE

%

35

45

-

RA Package (Ceramic)