© 2011 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSC5026M Rev. B3

1

January 2011

KSC5026M

NPN Silicon Transistor

Features

• High Voltage and High Reliability

• High Speed Switching

•Wide SOA

Absolute Maximum Ratings T

A = 25°C unless otherwise noted

Package Marking and Ordering Information

* The suffix "M" & "S" of FSID denotes TO126 package and the suffix "O" of FSID denotes hFE-class

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

1100

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current (DC)

1.5

A

ICP

Collector Current (Pulse)

5

A

IB

Base Current

0.8

A

PC

Collector Dissipation (TC=25°C)

20

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 to 150

°C

Part Number

Marking

Package

Packing Method

Remarks

KSC5026MOS*

C5026M-O

TO-126

BULK

1

TO-126

1. Emitter

2.Collector

3.Base