Data Sheet

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DS50004006A - 1

Product Overview

1200V, 45 mΩ typical at VGS = 18V, 56 mΩ typical at VGS = 15V, Silicon Carbide (SiC) N-Channel MOSFET, TO-247.

1

2

3

GATE

SOURCE

DRAIN

(TERMINAL 1)

(TERMINAL 3)

(TERMINAL 2, BACKSIDE)

Table 1. Ordering Information

Catalog Part Number (CPN)

Package

Packing Media (Qty.)

Qualification

MSC045SMB120B

TO-247

Tube (30)

Industrial

MSC045SMB120BVAO

TO-247

Tube (30)

AEC-Q101

Features

•

Low capacitances and low gate charge

•

Fast switching speed due to low internal gate resistance (ESR)

•

Stable operation at high junction temperature, TJ(max) = 175 °C

•

Fast and reliable body diode

•

Superior avalanche ruggedness (100% UIS production tested)

•

Creepage distance (Typ. > 2.55 mm)

•

RoHS compliant

Benefits

•

High efficiency to enable lighter and more compact system

•

Simple to drive and easy to parallel

•

Improved thermal capabilities and lower switching losses

•

Eliminates the need for external freewheeling diode

•

Lower system cost of ownership

Applications

•

Photovoltaic (PV) inverter, converter, and industrial motor drives

•

Smart grid transmission and distribution

•

Induction heating and welding

•

Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV)

charger

•

Power supply and distribution

1200V, 45 mΩ N-Channel mSiC™ MOSFET

MSC045SMB120B