HSC08065F datasheet(2/3 Pages) HUIXIN

Il numero della parte	HSC08065F

Spiegazioni elettronici	650V/8A SiC Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

Produttore elettronici	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

Homepage	http://www.hxkj.hk

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Electrical Characteristics (

)

T =25

unless otherwise speciﬁed

°C

Unit

TYP

1.27

Parameter

Instantaneous forward voltage

Symbols

MAX

Reverse current

I =8A, T =25°C

I =8A, T =175°C

1.50

1.38

V =650V, T =25°C

μA

200

1.60

V =650V, T =175°C

Total Capacitance

530

Total Capacitive Charge

Test Conditions

μA

V =0V, f=1MHz

V =200V, f=1MHz

V =400V, f=1MHz

V =400V, I =8A

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Rev.02

Page 2 of 3

Fig.1 Forward Characteristics

0.5

1.0

1.5

2.0

2.5

( )

Instantaneous Forward Voltage- V V

T =25

°C

T =125

°C

T =175

°C

( )

Peak Reverse Voltage -V

Fig.2 Typical Reverse Characteristics

400

600

800

700

500

300

200

100

150

200

T =125

°C

T =175

°C

T =25

°C

125

175

(

)

Case Temperature-T

°C

150

100

33.3

Fig.3 Power Derating

Fig.4 Total Capacitance vs. Reverse Voltage

( )

Reverse Voltage-V

0.1

600

400

200

100

1000

100

300

500

T =25

°C

Typical Performance

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