General Purpose Transistor

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

100

IC = 10mA, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Base cut-off current

IC = 1mA, IB = 0

IE = 100μA, IC = 0

VCE = 60V, IC = 0

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

60

40

6

V

V

V

nA

100

VCB = 35V, IB= 0

ICEO

nA

DC current gain

VCE = 1V, IC = 150mA

hFE

100

Collector-emitter saturation voltage

VCE(sat)

0.4

V

IC = 150mA, IB = 15mA

Base-emitter saturation voltage

VBE(sat)

V

IC = 150mA, IB = 15mA

0.95

Delay time

Storage time

Rise time

Fall time

VCC = 30V, VBE(off) = 0.2V,

IC = 150mA, IB1 = 15mA

VCC = 30V, IC = 150mA,

td

tr

ts

tf

15

20

225

30

ns

ns

ns

ns

Transition frequency

250

MHz

fT

VCE = 10V, IC = 20mA, f = 100MHZ

IB1 = IB2 = 15mA

Collector cut-off current

IEBO

Emitter cut-off current

nA

100

300

VEB = 3V, IC = 0

AQW-JTR23

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