MSC045SMB120SD

Device Specifications

 Data Sheet

© 2025 Microchip Technology Inc. and its subsidiaries

DS50004035A - 2

1.

Device Specifications

This section shows the specifications of this device.

1.1.

Absolute Maximum Ratings

The following table shows the absolute maximum ratings of this device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Ratings

Unit

VDSS

Drain source voltage

1200

V

ID

Continuous drain current at TC = 25 °C

49

A

Continuous drain current at TC = 100 °C

35

IDM

Pulsed drain current1

108

VGS

Gate-source voltage

21/–10

V

Transient gate-source voltage

23/–12

Recommended turn-on gate-source voltage

15 to 18

Recommended turn-off gate-source voltage

–5

PD

Total power dissipation at TC = 25 °C

237

W

Linear derating factor

1.5

W/°C

Note: 

1. Repetitive rating: Pulse width and case temperature are limited by the maximum junction

temperature.

1.2.

Thermal and Mechanical Characteristics

The following table shows the thermal and mechanical characteristics of this device.

Table 1-2. Thermal and Mechanical Characteristics

Symbol

Characteristic/Test Conditions

Min.

Typ.

Max.

Unit

RθJC

Junction-to-case thermal resistance

—

0.49

0.63

°C/W

TJ

Operating junction temperature

–55

—

175

°C

TSTG

Storage temperature

–55

—

175

—

Reflow temperature

—

—

260

°C

Wt

Package weight

—

1.6

—

g

ESD practices should comply with JESD-625.

1.3.

Electrical Performance

The following table shows the static characteristics of this device at TJ = 25 °C unless otherwise

specified.

Table 1-3. Static Characteristics

Symbol Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0V, ID = 100 μA

1200

—

—

V

RDS(on)

Drain-source on resistance1

VGS = 18V, ID = 10A

—

45

60

mΩ

VGS = 15V, ID = 10A

—

56

—

VGS = 18V, ID = 10A, TJ = 175 °C

—

74

—

VGS(th)

Gate-source threshold voltage

VGS = VDS, ID = 1.0 mA

1.9

3.0

5.0

V

VDS = 960V, ID = 1.0 mA

1.65

—

—