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TP65H015G5WS Scheda tecnica(PDF) 4 Page - Renesas Technology Corp

Il numero della parte TP65H015G5WS
Spiegazioni elettronici  650V SuperGaN® FET in TO-247-3 (source tab)
PDF  13 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

TP65H015G5WS Scheda tecnica(HTML) 4 Page - Renesas Technology Corp

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TP65H015G5WS Datasheet
R07DS1669EU0400 Rev.4.00
Nov 25, 2025
Page 4
2. Specifications
2.1
Absolute Maximum Ratings
Tc = 25°C unless otherwise stated.
Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such
conditions can adversely impact product reliability and result in failures not covered by warranty.
Symbol
Parameter
Limit Value
Unit
VDSS
Drain to source voltage (TJ = -55°C to 150°C)
650
V
VDSS(TR)
Transient drain to source voltage [1]
725
VGSS
Gate to source voltage
±20
PD
Maximum power dissipation at TC = 25°C
266
W
ID
Continuous drain current at TC = 25°C
99
A
Continuous drain current at TC = 100°C
62
A
IDM
Pulsed drain current (pulse width: 10µs)
600
A
TJ
Operating temperature junction
-55 to +150
°C
TS
Storage temperature
-55 to +150
°C
TSOLD
Reflow soldering temperature [3]
260
°C
1.
In off-state, spike duty cycle D< 0.01, spike duration < 1µs
2.
For 10 sec., 1.6mm from the case.
2.2
Thermal Specifications
Symbol
Condition
Typical Value
Unit
RΘJC
Junction-to-case
0.47
°C/W
RΘJA
Junction-to-ambient
40



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