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TP65H015G5WS Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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TP65H015G5WS Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
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4 / 13 page ![]() TP65H015G5WS Datasheet R07DS1669EU0400 Rev.4.00 Nov 25, 2025 Page 4 2. Specifications 2.1 Absolute Maximum Ratings Tc = 25°C unless otherwise stated. Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product reliability and result in failures not covered by warranty. Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55°C to 150°C) 650 V VDSS(TR) Transient drain to source voltage [1] 725 VGSS Gate to source voltage ±20 PD Maximum power dissipation at TC = 25°C 266 W ID Continuous drain current at TC = 25°C 99 A Continuous drain current at TC = 100°C 62 A IDM Pulsed drain current (pulse width: 10µs) 600 A TJ Operating temperature junction -55 to +150 °C TS Storage temperature -55 to +150 °C TSOLD Reflow soldering temperature [3] 260 °C 1. In off-state, spike duty cycle D< 0.01, spike duration < 1µs 2. For 10 sec., 1.6mm from the case. 2.2 Thermal Specifications Symbol Condition Typical Value Unit RΘJC Junction-to-case 0.47 °C/W RΘJA Junction-to-ambient 40 |
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