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DS1284Q/R Scheda tecnica(PDF) 9 Page - Dallas Semiconductor |
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DS1284Q/R Scheda tecnica(HTML) 9 Page - Dallas Semiconductor |
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9 / 18 page ![]() DS1284/DS1286 9 of 18 ABSOLUTE MAXIMUM RATINGS Voltage Range on Any Pin Relative to Ground……………………………………………..-0.3V to +7.0V Operating Temperature Range Commercial………………………………………………………………………………..0 °C to +70°C Industrial………………………………………………………………………………...-40°C to +85°C Storage Temperature Range………………………………………………………………...-40°C to +85°C Soldering Temperature………………..……………...See IPC/JEDEC J-STD-020 Specification (Note 13) Stresses beyond those listed as “Absolute Maxim Ratings” may cause permanent damage to the device. These are stress ratings only, any functional operation of the device at these or any other conditions beyond the those indicated in operations section of the specifications is no implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS (TA = -40°C to +85°C or 0°C to +70°C.) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Power-Supply Voltage VCC 4.5 5.0 5.5 V 10 Input Logic 1 VIH 2.2 VCC + 0.3 V 10 Input Logic 0 VIL -0.3 +0.8 V 10 VBAT Input Voltage VBAT 2.4 3.0 3.5 V 10 DC ELECTRICAL CHARACTERISTICS (VCC = 5V ±10%, TA = -40°C to +85°C or 0°C to +70°C.) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Leakage Current IIL -1.0 +1.0 µA Output Leakage Current ILO -1.0 +1.0 µA I/O Leakage Current CE ≥ VIH ≤ VCC ILIO -1.0 +1.0 µA Output Current at 2.4V IOH -1.0 mA Output Current at 0.4V IOL 2.0 mA Standby Current CE = 2.2V ICCS1 3.0 7.0 mA Standby Current CE > VCC - 0.5 ICCS2 4.0 mA Active Current ICC 15 mA Write-Protection Voltage VTP 1.088 x VBAT 1.26 x VBAT 1.324 x VBAT V DC ELECTRICAL CHARACTERISTICS (VCC = 0V, VBAT = 2.4V to 3.5V, TA = 0°C to +70°C.) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Battery Current ( EOSC = 0) IBAT +0.5 +0.6 µA |
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