Potens semiconductor corp.

Ver.1.02

2

PDC6906Z

60V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.07

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=60V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=48V , VGS=0V , TJ=125

℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=15A

---

17

21

m



VGS=4.5V , ID=8A

---

20

24

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =25uA

1.2

1.8

2.2

V

△VGS(th)

VGS(th) Temperature Coefficient

---

5

---

mV/

℃

gfs

Forward Transconductance

VDS=10V , ID=10A

---

9

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=30V , VGS=10V , ID=15A

---

28

42

nC

Qgs

Gate-Source Charge2 , 3

---

3.5

7

Qgd

Gate-Drain Charge2 , 3

---

6.5

10

Td(on)

Turn-On Delay Time2 , 3

VDD=30V , VGS=10V , RG=6



ID=-1A

---

7.2

14

ns

Tr

Rise Time2 , 3

---

38

72

Td(off)

Turn-Off Delay Time2 , 3

---

34

65

Tf

Fall Time2 , 3

---

8.2

16

Ciss

Input Capacitance

VDS=20V , VGS=0V , F=1MHz

---

1110

1665

pF

Coss

Output Capacitance

---

110

165

Crss

Reverse Transfer Capacitance

---

60

90

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

2.2

4.4



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

33

A

ISM

Pulsed Source Current

---

---

66

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25

℃

---

---

1

V

trr

Reverse Recovery Time2

VGS=0V,IS=-1A , dI/dt=100A/µs

TJ=25

℃

---

19.6

---

ns

Qrr

Reverse Recovery Charge2

---

14.2

---

nC

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=29A.,RG=25

,Starting T

J

=25

℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.