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ADRF5203BCCZN-R7 Scheda tecnica(PDF) 4 Page - Analog Devices

Il numero della parte ADRF5203BCCZN-R7
Spiegazioni elettronici  DC to 12GHz, Differential, Nonreflective, Silicon SPDT Switch
PDF  15 Pages
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
Logo AD - Analog Devices

ADRF5203BCCZN-R7 Scheda tecnica(HTML) 4 Page - Analog Devices

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Data Sheet
ADRF5203
SPECIFICATIONS
analog.com
Rev. 0 | 4 of 15
Table 1. Electrical Specifications (Continued)
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
Third-Order Intercept
IP3
100MHz to 10GHz, two-tone Input power = 15dBm each
tone, Δf = 1MHz
53
dBm
10GHz to 12GHz , two-tone input power = 15dBm each
tone, Δf = 1MHz
51
dBm
RF IMBALANCE
Amplitude
DC to 12GHz
<0.3
dB
Phase
DC to 12GHz
<8
Degrees
POWER SUPPLY REJECTION
PSRR
1MHz
Unfiltered
Without supply decoupling capacitors
>80
dB
Filtered
With supply decoupling capacitors, C1 = 10μF, C2 = 0.01μF,
C3 = 100pF
>140
dB
GROUP DELAY
tGD
100Ω differential, f = 12GHz
45
ps
SUPPLY CURRENTS
Positive
IDD
19
mA
Negative
ISS
18
mA
DIGITAL CONTROL INPUTS
CTRL, EN, and HIGHZ pins
Voltage
Low
VINL
0
0.8
V
High
VINH
1.2
3.3
V
Current
Low
IINL
<1
µA
High
IINH
<1
µA
RECOMMENDED OPERATING CONDITIONS
f = 100MHz to 10GHz, TCASE = 85°C, −8V < common-mode
voltage (VCM) < +8V
Supply Voltage
Positive
VDD
11.4
12.6
V
Negative
VSS
−12.6
−11.4
V
DC Input
Voltage Range
VDC
RFCP, RFCN, RF1P, RF1N, RF2P, and RF2N
−8
+8
V
Current Range
IDC
−160
+160
mA
Common-Mode Voltage Range
VCM
VCM1 and VCM2
−8
+8
V
RF Input Power 1,2,3,4
PIN
f = 100MHz to 10GHz, TCASE = 85°C, −8V < VCM < +8V
Through Path
RF signal is applied to RFC or through connected RFx
31
dBm
Terminated Path
RF signal is applied to unselected RFx (terminated within an
internal resistor)
Average
24
dBm
Peak5
31
dBm
Hot Switching
RF signal is applied to RFC or RFx while switching in
between RF1 and RF2.
24
dBm
Case Temperature
TCASE
−40
+105
°C
1 For power derating over frequency, see Figure 2 and Figure 3.
2 For power derating where a different DC voltage is applied for the selected and unselected RF channels, see Figure 4.
3 For the case where different DC voltages are applied at the positive and negative pins of the RF pair, see Figure 5.
4 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3dB.
5 Peak is ≤100ns pulse duration and 5% duty cycle.



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