MBR10150CTF datasheet(1/2 Pages) ISC

Il numero della parte	MBR10150CTF

Spiegazioni elettronici	Schotty Barrier Diode

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Schotty Barrier Diode

MBR10150CTF

www.iscsemi.com

1

FEATURES

· Low Forward Voltage Drop, Low Power losses

· High Efficiency Operation

· Lead Free Finish, RoHS Compliant

APPLICATIONS

· Switching Power Supply (SPS)

· Freewheeling Diode

· DC/DC Converter

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

150

V

IF(AV)

Average Rectified Forward Current

5×2

A

IFSM

Non-repetitive Peak Surge Current

(8.3ms Single Sine-Wave

Superimposed on Rated Load per

Diode)

180

A

TJ

Max. Junction Temperature

150

℃

Tstg

Storage Temperature Range

-50~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.0

℃

/W

12

3

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