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S6065KTP Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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S6065KTP Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc Thyristors S6065KTP www.iscsemi.com 2 THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VD=VDRM -- 20 uA IDRM Repetitive peak off-state current VD=VDRM -- 20 uA dv/dt Critical Rate of Rise of Off-state Voltage VD= 600V, Tj= 100℃ 600 -- V/us IGT Gate trigger current VD= 12V, RL= 30Ω 5 50 mA IH Holding Current IT= 0.4A -- 80 mA VGT Gate trigger voltage all quadrant VD= 12V, RL= 30Ω -- 2.0 V VTM On-state Voltage IT= 130A, tp= 380us -- 1.8 V VGD Gate Non-trigger Voltage VD= 600V, RL= 3.3kΩ, Tj= 125℃ -- 0.2 V tq Turn Off Time IT=2A, tp=50us; dv/dt= 5V/us, di/dt=-30A/us -- 35 ns PACKAGE OUTLINE Dimensions in mm SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.86 ℃ /W |
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