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STF4NK50ZD Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STF4NK50ZD
Spiegazioni elettronici  N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET
PDF  17 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF4NK50ZD Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
10
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 50µA
2.5
3.5
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 1.5A
2.3
2.7
Ω
Table 5.
Dynamic
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID = 1.5A
1.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS= 0
310
49
10
pF
pF
pF
Coss eq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Equivalent output
capacitance
VGS= 0, VDS =0V to 400V
33
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 400V, ID = 3A
VGS =10V
(see Figure 11)
12
3
7
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID= 1.5A,
RG = 4.7Ω, VGS =10V
(see Figure 18)
9.5
15.5
23
22
ns
ns
ns
ns



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