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M25P10 Scheda tecnica(PDF) 11 Page - STMicroelectronics |
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M25P10 Scheda tecnica(HTML) 11 Page - STMicroelectronics |
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11 / 21 page ![]() M25P10 11/21 sets the Write Enable Latch (WEL) which allows the execution of any further Bulk Erase. The Bulk Erase instruction is entered by driving the Chip select input (S) low, followed by the instruction byte on Data In input (D). The Chip Select input (S) must be driven low for the entire duration of the sequence. The device must be deselected just after the eighth bit of the instruction byte has been latched in. If not, the Bulk Erase instruction is not executed. As soon as the device is deselected, the self-timed Bulk Erase cycle (tBE) is initiated. While the Bulk Erase cycle is in progress, the status register may be read to check the WIP bit value. WIP is high during the self-timed Bulk Erase cycle and is low when it is completed. When the cycle is completed, the write enable latch (WEL) is reset. The Bulk Erase instruction is internally taken into account if, and only if, (BP0, BP1) = (0,0). In other words, the Bulk Erase instruction is ignored if at least one Sector is software protected. In this case the Bulk Erase instruction is discarded and none of the Sectors are erased. The timing sequence is shown in Figure 14. Enter Deep Power Down Mode (DP) After Power-on, when S is high, the memory is deselected, the Q output pin is at high impedance and the device is in the Standby Power Mode state (ICC1). Under this state, the Memory waits for a select condition and is able to receive, decode and execute all instructions.This mode is not the Deep Power Down Mode which is entered by the way of a specific instruction. The purpose of the Deep Power down mode is to drastically reduce the standby current from ICC1 to ICC2 (see Table 10). Once the device has entered the Deep Power Down Mode, all instructions are ignored except the RES instruction which releases the part from this Figure 15. DP: Enter Deep Power Down Mode Sequence C D AI03753 S 2 1 34567 0 tDP Deep Power Down Mode Stand-by Power Down Mode INSTRUCTION Figure 16. RES: Release from Deep Power Down Mode and Read Electronic Signature Sequence C D AI03755 S Q 23 2 1 3456789 10 28 29 30 31 32 33 34 35 22 21 3210 36 37 38 765432 0 1 HIGH IMPEDANCE DATA OUT (Electronic Signature) INSTRUCTION 24 BIT ADDRESS 0 MSB Stand-by Power Down Mode Deep Power Down Mode |
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