2SC4551 datasheet(1/2 Pages) ISC

Il numero della parte	2SC4551

Spiegazioni elettronici	Silicon NPN Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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Silicon NPN Power Transistor

2SC4551

www.iscsemi.com

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DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 60V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 0.3V(Max) @IC= 6A

APPLICATIONS

· DC/DC Converters

· Converters

· Power Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

10

A

ICP

Collector Current-Pulse

20

A

PC

Total Power Dissipation

@ Tc=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.16

℃

/W

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