AP05N06AF datasheet(1/7 Pages) APME

Il numero della parte	AP05N06AF

Spiegazioni elettronici	60V N-Channel Enhancement Mode MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Produttore elettronici	APME [A POWER MICROELECTRONICS]

Homepage

Logo

1 / 7 page

AP05N06AF

60V N-Channel Enhancement Mode MOSFET

AP05N06AF REV1.0

永源微電子科技有限公司

Description

The AP05N06AF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=60V ID =0.5A

RDS(ON) < 1600mΩ @ VGS=10V

（Type：1100mΩ）

ESD Rating：HBM≥2200V

Application

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP05N06AF

DFN1.0*0.6-3L

K72

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

0.5

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

0.13

A

IDM

Pulsed Drain Current2

1.5

A

EAS

Single Pulse Avalanche Energy3

1

mJ

PD@TC=25℃

Total Power Dissipation4

350

mW

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

128

℃/W

RθJC

Thermal Resistance Junction-Case1

15

℃/W

Codice articolo simile - AP05N06AF

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Advanced Power Electron...	AP05N20GH,J-HF	66Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electron...	AP05N20GH-HF	65Kb / 5P	Fast Switching Characteristics
VBsemi Electronics Co.,...	AP05N20GH-HF	1Mb / 10P	N-Channel 200 V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	AP05N20GH-HF	841Kb / 5P	N-Channel MOSFET uses advanced trench technology
Advanced Power Electron...	AP05N20GH-HF	66Kb / 4P	Simple Drive Requirement

More results

Descrizione simile - AP05N06AF

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Zetex Semiconductors	ZXMN6A07F	1Mb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET
Zetex Semiconductors	ZXMN6A08E6	850Kb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET
Taiwan Semiconductor Co...	TSM2N7002	129Kb / 3P	60V N-Channel Enhancement Mode MOSFET
Pan Jit International I...	PJP6000	127Kb / 4P	60V N-Channel Enhancement Mode MOSFET
	2N7002DW	164Kb / 5P	60V N-Channel Enhancement Mode MOSFET
	2N7002FN3	96Kb / 3P	60V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated	ZXMN6A08E6	657Kb / 8P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 5
Diodes Incorporated	DMN6040SVT-7	205Kb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 10
Pan Jit International I...	2N7002DW	155Kb / 5P	60V N-Channel Enhancement Mode MOSFET
Pan Jit International I...	2N7002W	159Kb / 6P	60V N-Channel Enhancement Mode MOSFET

More results

AP05N06AF Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

AP05N06AF Scheda tecnica(HTML) 1 Page - A POWER MICROELECTRONICS

Codice articolo simile - AP05N06AF

Descrizione simile - AP05N06AF

Html Pages

1 2 3 4 5 6 7

Scheda tecnica Scarica

Link URL