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AP6P04MSI Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP6P04MSI
Spiegazioni elettronici  -40V P-Channel Enhancement Mode MOSFET
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AP6P04MSI
-40V P-Channel Enhancement Mode MOSFET
AP6P04MSI REV1.0
永源微電子科技有限公司
Description
The AP6P04MSI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -40V ID =-6.0A
RDS(ON) < 72mΩ @ VGS=-10V （Type：65mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP6P04MSI
SOT223-3L
AP6P04MSI XXX YYYY
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Steady State
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ -4.5V1
-5.0
A
ID@TA=70℃
Continuous Drain Current, VGS @ -4.5V1
-3.0
A
IDM
Pulsed Drain Current2
-16.1
A
PD@TA=25℃
Total Power Dissipation3
1.32
W
PD@TA=70℃
Total Power Dissipation3
0.84
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
125
℃
/W
RθJC
Thermal Resistance Junction-Case1
80
℃
/W


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