AP7N30D

300V N-Channel Enhancement Mode MOSFET

AP7N30D REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

300

330

--

V

IDSS

Zero Gate Voltage Drain Current

VDS = 300V, VGS = 0V, TJ = 25ºC

--

--

1

μA

VDS = 240V, VGS = 0V, TJ = 125ºC

--

--

100

IGSS

Gate-Source Leakage

VGS = ±25V

--

--

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS=VGS, ID=250µA

2.0

3.0

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS=10V, ID=2.5A

--

900

1200

mΩ

Ciss

Input Capacitance

VGS=0V,

VDS=25V, f=1.0MHz

--

330

--

pF

Coss

Output Capacitance

--

70

--

Crss

Reverse Transfer Capacitance

--

9.5

--

Qg

Total Gate Charge

VDD=240V, ID=5.4A,

VGS=10V

--

9.8

--

nC

Qgs

Gate-Source Charge

--

2.4

--

Qgd

Gate-Drain Charge

--

5.1

--

td(on)

Turn-on Delay Time

VDD=150V, ID=5.4A,

RG=25Ω

--

11

--

ns

tr

Turn-on Rise Time

--

55

--

td(off)

Turn-off Delay Time

--

17

--

tf

Turn-off Fall Time

--

27

--

IS

Continuous Body Diode Current

TC=25ºC

--

--

7.0

A

ISM

Pulsed Diode Forward Current

--

--

24

VSD

Body Diode Voltage

TJ=25ºC, ISD=5.4A, VGS=0V

--

--

1.4

V

trr

Reverse Recovery Time

VGS=0V,IS=5A, diF/dt=100A /μs

--

130

--

ns

Qrr

Reverse Recovery Charge

--

0.6

--

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The EAS data shows Max. rating . IAS = 3.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.