AP12P10D datasheet(1/7 Pages) APME

Il numero della parte	AP12P10D

Spiegazioni elettronici	-100V P-Channel Enhancement Mode MOSFET

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Produttore elettronici	APME [A POWER MICROELECTRONICS]

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AP12P10D

-100V P-Channel Enhancement Mode MOSFET

AP12P10D REV1.0

永源微電子科技有限公司

Description

The AP12P10D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -100V ID =-12A

RDS(ON) <220mΩ @ VGS=10V (Type：180mΩ)

Application

Brushless motor

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP12P10D

TO-252-3L

AP12P10D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-12

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-6.7

A

IDM

Pulsed Drain Current2

-36

A

EAS

Single Pulse Avalanche Energy3

105

mJ

IAS

Avalanche Current

-12

A

PD@TC=25℃

Total Power Dissipation4

3.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃/W

RθJC

Thermal Resistance from Junction-to-Case

3.7

°C/W

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