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AP13P06D Scheda tecnica(PDF) 3 Page - A POWER MICROELECTRONICS |
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AP13P06D Scheda tecnica(HTML) 3 Page - A POWER MICROELECTRONICS |
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3 / 7 page ![]() AP13P06D -60V P-Channel Enhancement Mode MOSFET AP13P06D RVE1.0 永源微電子科技有限公司 0 2 4 6 8 10 0 0.5 1 1.5 2 -VDS , Drain-to-Source Voltage (V) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 60 65 70 75 80 2 4 6 8 10 -VGS (V) ID=-6A 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) TJ=150℃ TJ=25℃ 0 2 4 6 8 10 0 7 14 21 QG , Total Gate Charge (nC) VDS=-20V ID=-6A 0 0.5 1 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) 0.2 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 TJ , Junction Temperature (℃) P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ |
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