AP20P02BF datasheet(1/7 Pages) APME

Il numero della parte	AP20P02BF

Spiegazioni elettronici	-20V P-Channel Enhancement Mode MOSFET

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Produttore elettronici	APME [A POWER MICROELECTRONICS]

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AP20P02BF

-20V P-Channel Enhancement Mode MOSFET

AP20P02BF RVE1.0

永源微電子科技有限公司

Description

The AP20P02BF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-20A

RDS(ON) < 18mΩ @ VGS=-4.5V （Type：12mΩ）

Application

electronic cigarette

Load switch

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20P02BF

QFN2*2-6L

AP20P02BF XXX YYYY

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ -4.5V1

-20

A

ID@TC=70℃

Continuous Drain Current, VGS @ -4.5V1

-11.4

A

IDM

Pulsed Drain Current2

-60

A

PD@TC=25℃

Total Power Dissipation3

2.4

W

PD@TC=70℃

Total Power Dissipation3

19

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

52

℃

/W

RθJC

Thermal Resistance Junction-Case1

6.9

℃

/W

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