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AP24N60MP Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP24N60MP
Spiegazioni elettronici  600V N-Channel Enhancement Mode MOSFET
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AP24N60MP
600V N-Channel Enhancement Mode MOSFET
AP24N60MP REV1.0
永源微電子科技有限公司
Description
The AP24N60MP is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 600V ID =24A
RDS(ON) < 350mΩ @ VGS=10V （Type：280mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP24N60MP
TO-247-3L
AP24N60MP XXX YYYY
360
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
600
V
ID
Continuous Drain Current
24
A
IDM
Pulsed Drain Current
(note1)
100
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note2)
2880
mJ
IAR
Avalanche Current (note1)
24
A
EAR
Repetitive Avalanche Energy note1)
11.52
mJ
PD
Power Dissipation (TC = 25ºC)
189
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
0.66
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
62.5
ºC/W


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