AP30N03NF datasheet(1/7 Pages) APME

Il numero della parte	AP30N03NF

Spiegazioni elettronici	30V N-Channel Enhancement Mode MOSFET

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Produttore elettronici	APME [A POWER MICROELECTRONICS]

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AP30N03NF

30V N-Channel Enhancement Mode MOSFET

AP30N03NF REV1.0

永源微電子科技有限公司

Description

The AP30N03NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =30A

RDS(ON) < 18mΩ @ VGS=10V （Type：13mΩ）

Application

VBUS

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30N03NF

PDFN5*6-8L

AP30N03NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

30

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

12

A

IDM

Pulsed Drain Current2

50

A

EAS

Single Pulse Avalanche Energy3

8.1

mJ

IAS

Avalanche Current

12.7

A

PD@TC=25℃

Total Power Dissipation4

2

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

6

℃

/W

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