M28F201 datasheet(1/21 Pages) STMICROELECTRONICS

Il numero della parte	M28F201

Spiegazioni elettronici	2 Mb 256K x 8, Chip Erase FLASH MEMORY

PDF	21 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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M28F201

2 Mb (256K x 8, Chip Erase) FLASH MEMORY

April 1997

1/21

AI00637C

18

A0-A17

W

DQ0-DQ7

VPP

VCC

M28F201

G

E

VSS

8

Figure 1. Logic Diagram

A0-A17

Address Inputs

DQ0-DQ7

Data Inputs / Outputs

E

Chip Enable

G

Output Enable

W

Write Enable

VPP

Program Supply

VCC

Supply Voltage

VSS

Ground

Table 1. Signal Names

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

5V

± 10% SUPPLY VOLTAGE

12V PROGRAMMING VOLTAGE

FAST ACCESS TIME: 70ns

BYTE PROGRAMMING TIME: 10

µs typical

ELECTRICAL CHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

– Active Current: 15mA typical

– Stand-by Current: 10

µA typical

10,000 PROGRAM/ERASE CYCLES

INTEGRATED ERASE/PROGRAM-STOP

TIMER

OTP COMPATIBLE PACKAGES and PINOUTS

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: F4h

DESCRIPTION

The M28F201 FLASH Memory product is a non-

volatile memories which may be erased electrically

at the chip level and programmed byte-by-byte. It

is organised as 256K bytes. It uses a command

register architecture to select the operating modes

and thus provide a simple microprocessor inter-

face. The M28F201 FLASH Memory product is

suitable for applications where the memory has to

be reprogrammed in the equipment. The access

time of 70ns makes the device suitable for use in

high speed microprocessor systems.

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