AP60N02NF datasheet(1/7 Pages) APME

Il numero della parte	AP60N02NF

Spiegazioni elettronici	20V N-Channel Enhancement Mode MOSFET

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Produttore elettronici	APME [A POWER MICROELECTRONICS]

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AP60N02NF

20V N-Channel Enhancement Mode MOSFET

AP60N02NF RVE1.0

永源微電子科技有限公司

Description

The AP60N02NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=20V ID=60A

RDS(ON) < 6.0mΩ @ VGS=4.5V （Type：4.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP60N02NF

PDFN5*6-8L

50

AP60N02NF XXX YYYY

00

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 4.5V

60

A

ID@TA=70℃

Continuous Drain Current, VGS @ 4.5V

39

A

IDM

Pulsed Drain Current note1

200

A

EAS

Single Pulsed Avalanche Energy note2

47.6

mJ

PD@TA=25℃

Power Dissipation

37

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃/W

RθJC

Thermal Resistance, Junction to Case

4

℃

/W

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