AP70N04NF datasheet(1/7 Pages) APME

Il numero della parte	AP70N04NF

Spiegazioni elettronici	40V N-Channel Enhancement Mode MOSFET

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Produttore elettronici	APME [A POWER MICROELECTRONICS]

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AP70N04NF

40V N-Channel Enhancement Mode MOSFET

AP70N04NF RVE1.1

永源微電子科技有限公司

Description

The AP70N04NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =70A

RDS(ON) < 7.0mΩ @ VGS=10V （Type：5.0mΩ）

Application

BLDC

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP70N04NF

PDFN5*6-8L

AP70N04NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

70

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

39

A

IDM

Pulsed Drain Current2

240

A

EAS

Single Pulse Avalanche Energy3

181

mJ

IAS

Avalanche Current

20

A

PD@TC=25℃

Total Power Dissipation4

46

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient (Steady State)1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.7

℃

/W

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