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AP70N06HT Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP70N06HT
Spiegazioni elettronici  60V N-Channel Enhancement Mode MOSFET
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AP70N06HPIT
60V N-Channel Enhancement Mode MOSFET
AP70N06HP/T REV1.0
永源微電子科技有限公司
Description
The AP70N06HP/T uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =70A
RDS(ON) < 13mΩ @ VGS=10V （Type:9.5mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP70N06HP
TO-220-3L
AP70N06HP XXXX YYYY
1000
AP70N06HT
TO-263-3L
AP70N06HP XXXX YYYY
1000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
70
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
30
A
IDM
Pulsed Drain Current2
90
A
EAS
Single Pulse Avalanche Energy3
89
mJ
IAS
Avalanche Current
25
A
PD@TC=25
℃
Total Power Dissipation4
45
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃/W
RθJC
Thermal Resistance Junction-Case1
2.8
℃/W


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