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AP70N12NF Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP70N12NF
Spiegazioni elettronici  120V N-Channel Enhancement Mode MOSFET
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Produttore elettronici  APME [A POWER MICROELECTRONICS]
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AP70N12NF
120V N-Channel Enhancement Mode MOSFET
AP70N12NF RVE1.0
永源微電子科技有限公司
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP70N12NF
PDFN5*6-8L
AP70N12NF XXXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
120
V
VGS
Gate source voltage
±20
V
ID@TA=25℃
Continuous drain current1), TC=25 ℃
70
A
ID@TA=70℃
Continuous drain current1), TC=75 ℃
35
A
ID, pulse
Pulsed drain current2), TC=25 ℃
150
A
PD
Power dissipation3), TC=25 ℃
140
W
EAS
Single pulsed avalanche energy4)
53.8
mJ
Tstg，Tj
Operation and storage temperature
-55 to 150
℃
RθJC
Thermal resistance, junction-case
0.89
℃
/W
RθJA
Thermal resistance, junction-ambient5)
25
℃
/W
Description
The AP70N12NF uses advanced SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 120V ID =70A
RDS(ON) < 13mΩ @ VGS=10V （Type：10mΩ）
Application
Mobile phone fast charging
Brushless motor
Home appliance control board


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