M29F002B datasheet(13/29 Pages) STMICROELECTRONICS

13 / 29 page

Symbol

Alt

Parameter

Test Condition

M29F002T / M29F002NT / M29F002B

Unit

-70

-90

-120

VCC =5V

± 10% VCC =5V ± 10% VCC =5V ± 10%

Standard

Interface

Standard

Interface

Standard

Interface

Min

Max

Min

Max

Min

Max

tAVAV

tRC

Address Valid to

Next Address Valid

E=VIL,G = VIL

120

tAVQV

tACC

Address Valid to

Output Valid

E=VIL,G = VIL

120

tELQX

(1)

tLZ

Chip Enable Low to

Output Transition

G= VIL

tELQV

(2)

tCE

Chip Enable Low to

Output Valid

G= VIL

120

tGLQX

(1)

tOLZ

Output Enable Low

to Output Transition

E= VIL

tGLQV

(2)

tOE

Output Enable Low

to Output Valid

E= VIL

tEHQX

tOH

Chip Enable High to

Output Transition

G= VIL

tEHQZ

(1)

tHZ

Chip Enable High to

Output Hi-Z

G= VIL

tGHQX

tOH

Output Enable High

to Output Transition

E= VIL

tGHQZ

(1)

tDF

Output Enable High

to Output Hi-Z

E= VIL

tAXQX

tOH

Address Transition

to Output Transition

E=VIL,G = VIL

tPLEL

(1,3)

tREADY

RPNC Low to Read

Mode

µs

tPHEL

tRSP

RPNC High to Chip

Enable Low

tPLPX

tRP

RPNC Pulse Width

500

Notes: 1. Sampled only, not 100% tested.

2. G may be delayed by up to tELQV -tGLQV after the falling edge of E without increasing tELQV.

3. To be considered only if the Reset pulse is given while the memory is in Erase mode.

Table 14. Read AC Characteristics

(TA = 0 to 70

°C or –40 to 85°C)

13/29

M29F002T, M29F002NT, M29F002B

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