AP90N03DF

30V N-Channel Enhancement Mode MOSFET

AP90N03DF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Condition

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 1mA, VGS = 0V

30

36

V

IDSS

Zero Gate Voltage Drain Current

VDS = 30V, VGS = 0V

1.0

μA

IDSS TJ = 55°C

5.0

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250mA

1.2

1.7

2.5

V

RDS(ON)

Static Drain-Source ON-Resistance

VGS = 10V, ID = 20A

1.28

1.65

mΩ

VGS = 4.5V, ID = 15A

1.85

2.3

mΩ

gFS

Forward Transconductance

VDS = 5V, ID = 20A

85

S

Ciss

Input Capacitance

VGS = 0V, VDS = 15V, f =

1MHz

3100

pF

Coss

Output Capacitance

1800

pF

Crss

Reverse Transfer Capacitance

73

pF

Rg

Gate Resistance

VGS = 0V, VDS= 0V, f = 1MHz

1.4

Ω

Qg

Total Gate Charge

VGS = 0 to 10V

VDS = 15V, ID = 20A

49

nC

Qgs

Gate Source Charge

11

nC

Qgd

Gate Drain Charge

9

nC

tD(on)

Turn-On DelayTime

VGS = 10V, VDS = 15V

RL = 0.75Ω, RGEN = 3Ω

13

ns

tr

Turn-On Rise Time

24

ns

tD(off)

Turn-Off DelayTime

35

ns

tf

Turn-Off Fall Time

8.3

ns

trr

Body Diode Reverse Recovery Time

IF = 20A, dIF/dt = 100A/us

53

ns

Qrr

Body Diode Reverse Recovery Charge

71

nC

IS

Diode Continuous Current

TC = 25°C

90

A

VSD

Diode Forward Voltage

IS = 1A, VGS = 0V

0.68

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =32V,VGS =10V,L=0.1mH,IAS =54A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.