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AP150N03D Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP150N03D
Spiegazioni elettronici  30V N-Channel Enhancement Mode MOSFET
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AP150N03D
30V N-Channel Enhancement Mode MOSFET
AP150N03D REV3.9
永源微電子科技有限公司
Description
The AP150N03D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=30V ID =150A
RDS(ON) < 3.0mΩ @ VGS=10V
（Type：2.2mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP150N03D
AP150N03D XXX
TO252-3L
YYYY
2500
Absolute Maximum Ratings (TC=25
℃ unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1,6
155
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1,6
110
A
IDM
Pulsed Drain Current2
310
A
EAS
Single Pulse Avalanche Energy3
246
mJ
IAS
Avalanche Current
48
A
PD@TC=25
℃
Total Power Dissipation4
89.3
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃/W
RθJC
Thermal Resistance Junction-Case1
1.4
℃/W


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