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AP150N04D Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP150N04D
Spiegazioni elettronici  40V N-Channel Enhancement Mode MOSFET
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Produttore elettronici  APME [A POWER MICROELECTRONICS]
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AP150N04D
40V N-Channel Enhancement Mode MOSFET
AP150N04D RVE1.0
臺灣永源微電子科技有限公司
Description
The AP150N04D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 40V
ID =150 A
RDS(ON) < 2.3m
Ω @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP150N04D
AP150N04D XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1,6
150
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1,6
90
A
IDM
Pulsed Drain Current2
450
A
EAS
Single Pulse Avalanche Energy3
400
mJ
IAS
Avalanche Current
40
A
PD@TC=25
℃
Total Power Dissipation4
125
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
50
℃/W
RθJC
Thermal Resistance Junction-Case1
1
℃/W
TO-252-3L


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