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AP150N06D Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP150N06D
Spiegazioni elettronici  65V N-Channel Enhancement Mode MOSFET
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Produttore elettronici  APME [A POWER MICROELECTRONICS]
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AP150N06D
65V N-Channel Enhancement Mode MOSFET
AP150N06D REV1.0
永源微電子科技有限公司
Description
The AP150N06D uses advanced APM-SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =150A
RDS(ON) < 2.8mΩ @ VGS=10V （Type：2.1mΩ）
Application
Battery protection
UPS
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP150N06D
TO-252-3L
AP150N06D XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current1,6
150
A
ID@TC=100℃
Continuous Drain Current1,6
105
A
IDM
Pulsed Drain Current2
450
A
EAS
Single Pulse Avalanche Energy3
585
mJ
IAS
Avalanche Current
55
A
PD@TC=25℃
Total Power Dissipation4
168
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
1.5
℃
/W


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