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AP240N08P Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP240N08P
Spiegazioni elettronici  85V N-Channel Enhancement Mode MOSFET
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Produttore elettronici  APME [A POWER MICROELECTRONICS]
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AP240N08P Scheda tecnica(HTML) 1 Page - A POWER MICROELECTRONICS

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AP240N08PIT
85V N-Channel Enhancement Mode MOSFET
AP240N08P/T REV1.1
永源微電子科技有限公司
Description
The AP240N08P/T uses advanced SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 85V ID =240A
RDS(ON) < 2.4mΩ VGS=10V （Type：1.9mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP240N08P
TO-263-3L
AP240N08P XXX YYYY
1000
AP240N08T
AP240N08T XXX YYYY
800
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
85
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
240
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
171
A
IDM
Pulsed Drain Current
1080
A
EAS
Single Pulse Avalanche Energy
625
mJ
PD@TC=25℃
Total Power Dissipation4
329
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient
62.5
℃/W
RθJC
Thermal Resistance Junction-Case
0.53
℃/W
TO-220-3L


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