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HAT1069C Scheda tecnica(PDF) 1 Page - Renesas Technology Corp |
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HAT1069C Scheda tecnica(HTML) 1 Page - Renesas Technology Corp |
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1 / 6 page ![]() R07DS1169EJ0400 Rev.4.00 Page 1 of 5 Mar 19, 2014 Data Sheet HAT1069C Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance RDS(on) = 38 m Ω typ (at V GS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate G D S 6 1 5 D 2 D 3 D 4 1 2 3 6 5 4 Index band Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –12 V Gate to source voltage VGSS ±8 V Drain current ID –4 A Drain peak current ID(pulse) Note1 –16 A Body-drain diode reverse drain current IDR –4 A Channel dissipation Pch Note2 900 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the grass epoxy board. (FR4 40 × 40 × 1.6 mm) R07DS1169EJ0400 (Previous: REJ03G0164-0300) Rev.4.00 Mar 19, 2014 |
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