AP2305AI

-20V P-Channel Enhancement Mode MOSFET

AP2305AI RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown

Voltage

VGS= 0V, ID= -250μA

-20

-24

-

V

IGSS

Gate-Body Leakage

VDS= 0V, VGS= ±10V

-

-

±10

μA

IDSS

Zero Gate Voltage Drain

Current

VDS= -20V, VGS= 0V

-

-

-1

μA

VGS(th)

Gate-Threshold Voltage

VDS= VGS, ID= -250μA

-0.3

-0.65

-1

V

RDS(on)

Drain-Source on-Resistance3

VGS= -4.5V,ID= -4A

-

27

35

mΩ

VGS= -2.5V,ID= -4A

-

36

45

VGS= -1.8V,ID= -2A

-

49

60

Ciss

Input Capacitance

VGS = 0V ,VDS = -10V, f=1MHz

-

1000

-

pF

Coss

Output Capacitance

-

120

-

Crss

Reverse Transfer Capacitance

-

100

-

Qg

Total Gate Charge

VGS= -4.5V ,VDS= -10V,

ID= -4A

-

12

-

nC

Qgs

Gate-Source Charge

-

1.3

-

Qgd

Gate-Drain Charge

-

4.5

-

td(on)

Turn-on Delay Time

VDS= -10V, VGS= -4.5V

ID= -4A , RG= 3Ω

-

12

-

ns

tr

Rise Time

-

10

-

td(off)

Turn-off Delay Time

-

19

-

tf

Fall Time

-

25

-

VDS

Body Diode voltage3

IS= -1A,VGS=0V

-

-

-1

V

IS

Continuous Source Current

-

-

-4

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width △ 300us , duty cycle △ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.