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AP3205P Scheda tecnica(PDF) 1 Page - A POWER MICROELECTRONICS

Il numero della parte AP3205P
Spiegazioni elettronici  55V N-Channel Enhancement Mode MOSFET
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AP3205P
55V N-Channel Enhancement Mode MOSFET
AP3205P Rve1.0
臺灣永源微電子科技有限公司
Description
The AP3205P is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS =55V,ID=110A
RDS(ON) <8.0m
Ω@ VGS=10V
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP3205P
TO-220-3L
AP3205P XXX YYYY
1000
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
55
V
VGSS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current
TC = 25℃
110
A
TC = 100℃
80
A
IDM
Pulsed Drain Current note1
390
A
PD
Power Dissipation
TC = 25℃
200
W
RθJC
Thermal Resistance, Junction to Case
0.75
℃/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
℃


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