AP3415AI

-20V P-Channel Enhancement Mode MOSFET

AP3415AI Rve:1.2

臺灣永源微電子科技有限公司

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source breakdown voltage

VGS = 0V, ID = -250μA

-20

—

—

V

RDS(on)

Static Drain-to-Source on-resistance

VGS=-4.5V,ID = -4A

—

37

43

mΩ

VGS=-2.5V,ID = -4A

—

45

54

VGS=-1.8V,ID = -2A

—

56

73

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250μA

-0.3

—

-1.0

V

TJ = 125°C

—

-0.44

—

IDSS

Drain-to-Source leakage current

VDS = -16V,VGS = 0V

—

—

-1

μA

TJ = 125°C

—

—

-50

IGSS

Gate-to-Source forward leakage

VGS =8V

—

—

10

μA

VGS = -8V

—

—

-10

Qg

Total gate charge

ID = -4A,

VDS=-10V,

VGS = -4.5V

—

10

—

nC

Qgs

Gate-to-Source charge

—

0.77

—

Qgd

Gate-to-Drain("Miller") charge

—

3.5

—

td(on)

Turn-on delay time

VGS=-4.5V, VDS =-10V,

RGEN=3Ω，

—

10

—

ns

tr

Rise time

—

8.6

—

td(off)

Turn-Off delay time

—

29

—

tf

Fall time

—

13

—

Ciss

Input capacitance

VGS = 0V, VDS =-10V, ƒ =

1MHz

—

939

—

pF

Coss

Output capacitance

—

130

—

Crss

Reverse transfer capacitance

—

111

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

IS

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the integral

reverse p-n junction diode.

—

—

-4.2A ①

A

ISM

Pulsed Source Current

(Body Diode)

—

—

-30

A

VSD

Diode Forward Voltage

IS=1A, VGS=0V

—

-0.76

-1.0

V

trr

Reverse Recovery Time

TJ = 25°C, IF =-4A, di/dt =

100A/μs

—

8.7

—

ns

Qrr

Reverse Recovery Charge

—

2.3

—

nC

Notes:

①Calculated continuous current based on maximum allowable junction temperature.

②Repetitive rating; pulse width limited by max. junction temperature.

③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance.

④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C