AP3416AI

20V N-Channel Enhancement Mode MOSFET

AP3416AI REV1.1

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

20

22

V

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

0.5

0.65

1.2

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V, ID=4A

15

22

mΩ

RDS(ON)

Static Drain-Source On-Resistance

VGS=2.5V, ID=3A

20

30

IDSS

Zero Gate Voltage Drain Current

VDS=20V,VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±10V, VDS=0V

±100

nA

Ciss

Input Capacitance

VDS=10V,VGS=0V,

f=1MHZ

780

pF

Coss

Output Capacitance

140

Crss

Reverse Transfer Capacitance

80

Qg

Total Gate Charge

VGS=4.5V,VDS=10V,ID=6.8A

11

nC

Qgs

Gate-Source Charge

2.3

Qgd

Gate-Drain Charge

2.9

tD(on)

Turn-on Delay Time

VGS=4.5V, VDS=10V,

ID=6.8A,RGEN=3Ω

9

ns

tr

Turn-on Rise Time

30

tD(off)

Turn-off Delay Time

35

tf

Turn-off fall Time

10

VSD

Diode Forward Voltage

IS=6.8A,VGS=0V

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150

℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation