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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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IRFH7923PBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRFH7923PBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFH7923PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 6.8 8.7 ––– 9.3 11.9 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 29 ––– ––– S Qg Total Gate Charge ––– 8.7 13 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.8 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.1 ––– Qgd Gate-to-Drain Charge ––– 2.7 ––– Qgodr Gate Charge Overdrive ––– 3.1 ––– See Fig.17 & 18 Qsw Switch Charge (Qgs2 + Qgd) ––– 3.8 ––– Qoss Output Charge ––– 4.9 ––– nC RG Gate Resistance ––– 2.0 3.0 Ω td(on) Turn-On Delay Time ––– 7.1 ––– tr Rise Time ––– 8.7 ––– td(off) Turn-Off Delay Time ––– 8.6 ––– tf Fall Time ––– 4.9 ––– Ciss Input Capacitance ––– 1095 ––– Coss Output Capacitance ––– 235 ––– Crss Reverse Transfer Capacitance ––– 110 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 11 17 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 4.5V, ID = 12A e VGS = 4.5V Typ. ––– RG=1.8Ω VDS = 15V, ID = 12A VDS = 24V, VGS = 0V, TJ = 125°C m Ω µA ID = 12A TJ = 25°C, IF = 12A, VDD = 15V di/dt = 300A/µs eà TJ = 25°C, IS = 12A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 20V VGS = -20V VDS = 24V, VGS = 0V MOSFET symbol VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 12A VGS = 0V VDS = 15V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A e pF nC Conditions See Fig.15 Max. 26 12 ƒ = 1.0MHz VDS = 15V ––– VDS = VGS, ID = 25µA A 3.7 ––– ––– 120 ––– ––– nA ns |
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