AP4953B

-20V P+P-Channel Enhancement Mode MOSFET

AP4953B RVE:1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-20

V

IDSS

Zero Gate Voltage Drain Current

VDS=-20V,VGS=0V

-1

μA

IGSS

Gate-Body Leakage Current

VGS=±10V, VDS=0V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=-250μA

-0.4

-0.62

-1.2

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-3.4A

42

55

mΩ

VGS=-2.5V, ID=-3.0A

55

75

VGS=-1.8V, ID=-2.5A

85

100

VSD

Diode Forward Voltage

IS=-3.4A,VGS=0V

-1.2

V

Ciss

Input Capacitance

VDS=-

10V,VGS=0V,f=1MHZ

438

pF

Coss

Output Capacitance

76

Crss

Reverse Transfer Capacitance

62

Qg

Total Gate Charge

VGS=-10V,VDS=-10V,ID=-

3.4A

5.41

nC

Qgs

Gate-Source Charge

1.17

Qgd

Gate-Drain Charge

1.24

Qrr

Reverse Recovery Chrage

IF=-3.4A, di/dt=100A/us

4

trr

Reverse Recovery Time

24.5

ns

tD(on)

Turn-on Delay Time

VGS=-4.5V, VDS=-10V,

ID=-1A

RGEN=3Ω

6.4

tr

Turn-on Rise Time

21.8

tD(off)

Turn-off Delay Time

37.4

tf

Turn-off fall Time

34

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width △ 300us , duty cycle △ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.