M48T35AY datasheet(13/19 Pages) STMICROELECTRONICS

13 / 19 page

13/19

M48T35AY, M48T35AV

Figure 11. Crystal Accuracy Across Temperature

AI02124

-80

-60

-100

-40

-20

∆F

= -0.038

(T - T

± 10%

ppm

0 = 25 °C

ppm

°C

Figure 12. Supply Voltage Protection

AI02169

VCC

0.1

µF

DEVICE

VCC

VSS

POWER SUPPLY DECOUPLING and

UNDERSHOOT PROTECTION

ICC transients, including those produced by output

switching, can produce voltage fluctuations, re-

sulting in spikes on the VCC bus. These transients

can be reduced if capacitors are used to store en-

ergy, which stabilizes the VCC bus. The energy

stored in the bypass capacitors will be released as

low going spikes are generated or energy will be

absorbed when overshoots occur. A bypass ca-

pacitor value of 0.1µF (as shown in Figure 12) is

recommended in order to provide the needed fil-

tering.

In addition to transients that are caused by normal

SRAM operation, power cycling can generate neg-

ative voltage spikes on VCC that drive it to values

below VSS by as much as one Volt. These nega-

tive spikes can cause data corruption in the SRAM

while in battery backup mode. To protect from

these voltage spikes, it is recommended to con-

nect a schottky diode from VCC to VSS (cathode

connected to VCC, anode to VSS). Schottky diode

1N5817 is recommended for through hole and

MBRS120T3 is recommended for surface mount.

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