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M54HC623 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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M54HC623 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() M54/74HC620 M54/74HC623 October 1992 HC620 3 STATE INVERTING HC623 3 STATE NON INVERTING OCTAL BUS TRANSCEIVER B1R (Plastic Package) ORDER CODES : M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1R F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) PIN CONNECTIONS (top view) NC = No Internal Connection DESCRIPTION . HIGH SPEED tPD = 10 ns (TYP.) AT VCC =5 V . LOW POWER DISSIPATION ICC =4 µA (MAX.) AT TA =25 °C . HIGH NOISE IMMUNITY VNIH =VNIL =28 % VCC (MIN.) . OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS . SYMMETRICAL OUTPUT IMPEDANCE |IOH|= IOL = 6 mA (MIN.) . BALANCED PROPAGATION DELAYS tPLH =tPHL . WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V to 6 V . PIN AND FUNCTION COMPATIBLE WITH LS620/623 The M54/74HC620/623 are high speed CMOS OCTAL BUS TRANSCEIVERS fabricated in silicon gate C 2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. These octal bus transceivers are designed for asyn- chronous two-way communication between data buses. The control function implementation allows maximum flexibility in timing. These devices allow data transmission from the A bus to B bus or from the B to the A bus depending upon the logic levels at the enable inputs (GBA and GAB). The enable inputs can be used to disable the device so that the buses are effectively isolated. The dual-enable configuration gives these devices the capability to store data by simultaneous enabling of GBA and GAB. Each output reinforces its input in this transceiver configuration. Thus, when both control inputs are enabled and all other data sources to the two sets of bus lines are at high impedance, both sets of bus lines (16 in all) will remain at their last states. The 8- bit codes appearing on the two sets of buses will be identical for the ’HC623 or complementary for the ’HC620. All inputs are equipped with protection cir- cuits against static discharge and transient excess voltage. 1/11 |
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