DIO2213, Version 1.0, Jan 2024

www.dioo.com

© 2024 DIOO MICROCIRCUITS CO., LTD.

3

4. ESD Ratings

When a statically-charged person or object touches an electrostatic discharge sensitive device, the

electrostatic charge might be drained through sensitive circuitry in the device. If the electrostatic discharge

possesses sufficient energy, damage might occur to the device due to localized overheating.

Model

Standard

Value

Unit

Human-body model

ANSI/ESDA/JEDEC JS-001

±

2000

V

5. Thermal Considerations

The thermal resistance determines the heat insulation property of a material. The higher the thermal

resistance is, the lower the heat loss. Accumulation of heat energy degrades the performance of

semiconductor components.

Symbol

Parameter

Value

Unit

SOIC-8

DFN2*2-6

RθJA

Junction-to-ambient thermal resistance

130

TBD

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

50

TBD

°C/W

6. Electrical Characteristics

The values are obtained under these conditions unless otherwise specified: The values are obtained under

these conditions unless otherwise specified: TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Input

VSENSE

Sense input voltage

in full-scale

VSENSE = VIN+ – VIN–

0.15

(VS-0.25)/G

V

VCM

Common-mode input range

TA = -40°C to 125°C

-0.1

75

V

CMR

Common-mode rejection

VIN+ = 0 to 80 V

80

100

dB

VOS

Offset voltage, RTI

TA = 25°C

±20

±50

μV

TA = -40°C to 125°C

±100

μV

dVOS/dT

Offset voltage, RTI, versus

temperature

TA = -40°C to 125°C

0.3

μV/°C

PSR

Offset voltage, RTI, versus

power supply

VOUT = 2 V, VIN+ = 18 V, 2.7 V,

TA = -40°C to 125°C

±20

μV/V

IB

Input bias current, VIN– pin

TA = -40°C to 125°C

±220

μA

Output (VSENSE ≥ 20 mV)

G

Gain

50

V/V